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Soft Switching Series
IHW30N90R q
Reverse Conducting IGBT with monolithic body diode
Features: * 1.5V typical saturation voltage of IGBT * Trench and Fieldstop technology for 900 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - easy parallel switching capability due to positive temperature coefficient in VCE(sat) * Low EMI 1 * Qualified according to JEDEC for target applications * Application specific optimisation of inverse diode * Pb-free lead plating; RoHS compliant Applications: * Microwave Oven * Soft Switching Applications for ZCS Type IHW30N90R VCE 900V IC 30A VCE(sat),Tj=25C 1.5V Tj,max 175C Marking H30R90 Package PG-TO-247-3-21
C
G
E
PG-TO-247-3-21
Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25C TC = 100C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE 1200V, Tj 150C Diode forward current TC = 25C TC = 100C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Transient Gate-emitter voltage (tp < 5 ms) Power dissipation, TC = 25C Operating junction temperature Storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s Ptot Tj Tstg IFpul s VGE ICpul s IF 60 30 90 20 25 454 -40...+175 -55...+175 260 W C C V Symbol VCE IC 60 30 90 90 Value 900 Unit V A
1
J-STD-020 and JESD-022 1 Rev. 2.0 July 06
Power Semiconductors
Soft Switching Series
IHW30N90R q
Max. Value 0.33 0.33 40 Unit K/W
Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction - case Diode thermal resistance, junction - case Thermal resistance, junction - ambient Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0V , I C = 0 .5m A VCE(sat) V G E = 15 V , I C = 30 A T j =2 5 C T j =1 5 0 C T j =1 7 5 C Diode forward voltage VF V G E = 0V , I F = 3 0 A T j =2 5 C T j =1 5 0 C T j =1 7 5 C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C = 70 0 A , V C E = V G E V C E = 90 0 V, V G E = 0V T j =2 5 C T j =1 5 0 C Gate-emitter leakage current IGES V C E = 0V , V G E =2 0 V 5 2500 600 nA 5.1 1.4 1.4 1.45 5.8 1.6 6.4 A 1.5 1.6 1.7 1.7 900 V Symbol Conditions Value min. Typ. max. Unit RthJA RthJCD RthJC Symbol Conditions
Power Semiconductors
2
Rev. 2.0
July 06
Soft Switching Series
IHW30N90R q
2889 83 79 200 13 nC nH pF
Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case Ciss Coss Crss QGate LE V C E = 25 V , V G E = 0V , f= 1 MH z V C C = 72 0 V, I C =3 0 A V G E = 15 V
Switching Characteristic, Inductive Load, at Tj=25 C Parameter IGBT Characteristic Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(off) tf Eon Eoff Ets T j =2 5 C V C C = 60 0 V, I C = 30 A , V G E = 0/ 15 V , R G = 1 5 511 24 1.46 1.46 mJ Symbol Conditions Value min. Typ. Max. Unit
Switching Characteristic, Inductive Load, at Tj=175 C Parameter IGBT Characteristic Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(off) tf Eon Eoff Ets T j =1 7 5 C V C C = 60 0 V, I C = 30 A , V G E = 0/ 15 V , R G = 1 5 594 46 2.1 2.1 mJ Symbol Conditions Value min. Typ. max. Unit
Power Semiconductors
3
Rev. 2.0
July 06
Soft Switching Series
IHW30N90R q
tp=1s
80A TC=80C 60A TC=110C 40A
10s 20s
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
10A
50s
200s
Ic
20A
1ms 1A DC
0A 100Hz
1kHz
10kHz
100kHz
1V
10V
100V
1000V
f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency for triangular current (Eon = 0, hard turn-off) (Tj 175C, D = 0.5, VCE = 600V, VGE = 0/+15V, RG = 15)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. IGBT Safe operating area (D = 0, TC = 25C, Tj 175C;VGE=15V)
400W
50A
350W
IC, COLLECTOR CURRENT
Ptot, DISSIPATED POWER
300W 250W 200W 150W 100W 50W 0W 25C
40A
30A
20A
10A
50C
75C
100C
125C
150C
0A 25C
75C
125C
TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj 175C)
TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE 15V, Tj 175C)
Power Semiconductors
4
Rev. 2.0
July 06
Soft Switching Series
IHW30N90R q
80A 70A
VGE=20V 15V
80A 70A
VGE=20V 15V 13V 11V 9V 7V
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
60A 50A 40A 30A 20A 10A 0A 0.0V
13V 11V 9V 7V
60A 50A 40A 30A 20A 10A 0A 0.0V
0.5V
1.0V
1.5V
2.0V
2.5V
0.5V
1.0V
1.5V
2.0V
2.5V
VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25C)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristic (Tj = 175C)
VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE
60A
IC=60A 2.0V
IC, COLLECTOR CURRENT
50A 40A 30A 20A 10A 0A TJ =175C 25C
1.5V
IC=30A
1.0V
IC=15A
0.5V
0V
2V
4V
6V
8V
0.0V 50C 100C 150C
VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristic (VCE=20V)
TJ, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V)
Power Semiconductors
5
Rev. 2.0
July 06
Soft Switching Series
IHW30N90R q
1000ns td(off)
1000ns td(off)
t, SWITCHING TIMES
t, SWITCHING TIMES
100ns tf
100ns tf
0A
10A
20A
30A
40A
50A
10ns
20
30
40
IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, TJ=175C, VCE=600V, VGE=0/15V, RG=15, Dynamic test circuit in Figure E)
RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ=175C, VCE=600V, VGE=0/15V, IC=30A, Dynamic test circuit in Figure E)
1000ns td(off)
VGE(th), GATE-EMITT TRSHOLD VOLTAGE
7V
t, SWITCHING TIMES
6V
5V
max. typ.
100ns
4V
3V min. 2V -50C 0C 50C 100C 150C
tf 25C 50C 75C 100C 125C 150C
TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE=600V, VGE=0/15V, IC=30A, RG=15, Dynamic test circuit in Figure E)
TJ, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.7mA)
Power Semiconductors
6
Rev. 2.0
July 06
Soft Switching Series
IHW30N90R q
4.0mJ
E, SWITCHING ENERGY LOSSES
E, SWITCHING ENERGY LOSSES
3.0mJ
Eoff
3.0mJ
Eoff
2.0mJ
2.0mJ
1.0mJ
1.0mJ
0.0mJ 0A 10A 20A 30A 40A 50A
0.0mJ
20 30 40
IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, TJ=175C, VCE=600V, VGE=0/15V, RG=15, Dynamic test circuit in Figure E)
RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, TJ=175C, VCE=600V, VGE=0/15V, IC=30A, Dynamic test circuit in Figure E)
Eoff 2.0mJ
E, SWITCHING ENERGY LOSSES
1.5mJ
1.0mJ
0.5mJ
0.0mJ 25C
50C
75C
100C 125C 150C
TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE=600V, VGE=0/15V, IC=30A, RG=15, Dynamic test circuit in Figure E)
Power Semiconductors
7
Rev. 2.0
July 06
Soft Switching Series
IHW30N90R q
Ciss
VGE, GATE-EMITTER VOLTAGE
180V 720V
1nF
c, CAPACITANCE
10V
100pF
Coss
5V
Crss
0V
0nC
50nC
100nC
150nC
200nC
250nC
10pF
0V
10V
20V
QGE, GATE CHARGE Figure 16. Typical gate charge (IC=30 A)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 17. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz)
ZthJC, TRANSIENT THERMAL RESISTANCE
10 K/W
-1
ZthJC, TRANSIENT THERMAL RESISTANCE
D=0.5
D=0.5
0.2 0.1 0.05 0.02 0.01
R,(K/W) 0.0395 0.1559 0.1075 0.0275
R1
10 K/W
-1
0.2 0.1 0.05 0.02 0.01
R,(K/W) 0.0842 0.1202 0.0877 0.0385
R1
, (s) 1.10*10-1 1.43*10-2 8.67*10-4 1.09*10-4
R2
, (s) 6.67*10-2 9.59*10-3 7.33*10-4 8.56*10-5
R2
10 K/W
-2
single pulse
C 1 = 1 /R 1
C 2 = 2 /R 2
10 K/W
-2
single pulse
C 1 = 1 /R 1 C 2 = 2 /R 2
10s
100s
1ms
10ms
100ms
10s
100s
1ms
10ms
100ms
tP, PULSE WIDTH Figure 18. IGBT transient thermal resistance (D = tp / T)
tP, PULSE WIDTH Figure 19. Typical Diode transient thermal impedance as a function of pulse width (D=tP/T)
Power Semiconductors
8
Rev. 2.0
July 06
Soft Switching Series
IHW30N90R q
50A
IF=60A 2.0V
VF, FORWARD VOLTAGE
IF, FORWARD CURRENT
40A
30A 1.5V 15A 1.0V
30A TJ=25C 20A 175C
10A
0.5V
0A
0.0V
0.5V
1.0V
1.5V
2.0V
0.0V
50C
100C
150C
VF, FORWARD VOLTAGE Figure 20. Typical diode forward current as a function of forward voltage
TJ, JUNCTION TEMPERATURE Figure 21. Typical diode forward voltage as a function of junction temperature
Power Semiconductors
9
Rev. 2.0
July 06
Soft Switching Series
IHW30N90R q
PG-TO247-3-21
Power Semiconductors
10
Rev. 2.0
July 06
Soft Switching Series
IHW30N90R q
diF /dt tr r =tS +tF Qr r =QS +QF IF tS QS tr r tF 10% Ir r m t VR
i,v
Ir r m
QF
dir r /dt 90% Ir r m
Figure C. Definition of diodes switching characteristics
1
Tj (t) p(t)
r1
r2
2
n
rn
r1
r2
rn
Figure A. Definition of switching times
TC
Figure D. Thermal equivalent circuit
Figure B. Definition of switching losses
Figure E. Dynamic test circuit
Power Semiconductors
11
Rev. 2.0
July 06
Soft Switching Series
IHW30N90R q
Edition 2006-01 Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 7/24/06. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Power Semiconductors
12
Rev. 2.0
July 06

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